Study of Performance Enhancement of SBCNFET
نویسندگان
چکیده
Carbon Nanotube Field Effect Transistors (CNTFET) are promising nanoscaled devices for implementing high performance, very dense and low power circuits. Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel known as SBCNFET. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction. The leakage current, which increases exponentially with the drain voltage, constrains the potential applications of such devices. This paper reviews such problems and their required solutions.
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